preliminary solid state devices, inc. SFF75N06-28 features: data sheet #: ft0001a maximum ratings v gs 20 volts gate to source voltage i d 30 continuous drain current @ tc = 25 o c drain to source voltage v ds 100 amps volts watts ? rugged construction with poly silicon gate ? low rds (on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input transfer capacitance for easy paralleling ? hermetically sealed surface mount package ? tx, txv and space level screening available 28 pin clcc 30 amp 1/ 60 volts 25m s n-channel power mosfet total device dissipation @ tc = 25 o c p d 35 thermal resistance, junction to case (all four) r 2 jc t op & t stg -55 to +150 operating and storage temperature o c designer's data sheet 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. o c/w 3.5 characteristic symbol value unit package outline: 28 pin clcc pin out: source: 1, 15 - 28 drain: 5 - 11 gate: 2, 3, 13, 14 note: all drain/source pins must be connected on the pc board in order to maximize current carrying capability and to mini- mize rds (on) v dg 60 60 60 60 60 volts drain to gate voltage ( rgs = 1.0 m s )
solid state devices, inc. SFF75N06-28 preliminary 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 electrical characteristics @ t j =25 o c (unless otherwise specified) v drain to source breakdown voltage (vgs =0 v, id =250 : a) - bv dss - rating symbol min typ max unit 60 m s drain to source on state resistance 2/ (vgs = 10 v) 23 25 27 r ds(on) 25 27 - - - - v gate threshold voltage (vds =vgs, id =250 : a) - v gs(th) 4 2 s( ) forward transconductance (vds > id(on) x rds (on) max, ids =60% rated id) 35 gf s - 15 : a zero gate voltage drain current (vds =80% rated vds, vgs =0 v, t a = 25 o c ) (vds =80% rated vds, vgs =0 v, t a = 125 o c ) - - i dss - - gate to source leakage forward gate to source leakage reverse - - i gss 100 100 - - at rated vgs total gate charge gate to source charge gate to drain charge vgs =10 volts 50% rated vds rated id qg qgs qgd - - - 83 13 40 100 20 55 nsec turn on delay time rise time turn off delay time fall time vdd =50% rated vds rated id rg = 6.2 s t d (on) tr t d (off) tf - - - - 20 35 65 40 40 70 130 80 v 1.47 v sd 1.6 - diode reverse recovery time reverse recovery charge 70 t rr 150 - tj =25 o c if = 10a di/dt = 100a/ : sec input capacitance output capacitance reverse transfer capacitance vgs =0 volts vds =25 volts f =1 mhz ciss coss crss - - - 2600 700 260 2900 1100 275 pf nsec for thermal derating curves and other characteristic curves please contact ssdi marketing department. diode forward voltage (i s = rated i d , v gs = 0v, t j = 25 o c) nc na 10 100 60% of rated id, t c = 25 o c rated id, t c = 25 o c 60% of rated id, t c = 150 o c notes: 1/ die rating: 75amps. 2/ all package pins of the same terminations (drain/source/gate) must be connected together to minimize r ds(on) and maximize current carrying capability.
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